| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of obtaining the higher ion-assist effect than heretofore. Ž<P>SOLUTION: The film deposition apparatus 1 comprises: a substrate holder 12 which is turnably arranged in a vacuum container 10 to hold a substrate 14; a vapor deposition source 34 which supplies a film deposition material to the substrate 14 to be held by the substrate holder 12 and deposits the film deposition material on a film deposition surface of the substrate 14; and an ion source 38 arranged so as to partially irradiate ion beam to a part of the substrate 14. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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