METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein an etching height is not varied by a change in an etching speed due to ion implantation to an element isolation insulating film when forming a CMOS having an STI type element isolation structure. SOLUTION: The method for manufacturing the semiconductor device includes: a step for forming an element isolation region having an STI structure on a silicon substrate 21; and a step for forming a first well and a second well by doping first impurity elements into a first element region 21A of the silicon substrate 21 by first ion implantation in a state that the first region 21A of the silicon substrate 21 and an element isolation insulating film 21IB of a second element region 21B are covered with an opened first resist pattern R21B and doping second impurity elements into the second element region 21B of the silicon substrate 21 by second ion implantation in a state that the second region 21B of the silicon substrate 21 and an element isolation insulating film 21IA of the first element region 21A are covered with an opened second resist pattern R21A. COPYRIGHT: (C)2010,JPO&INPIT