发明名称 Ultrafast and ultralow threshold single emitter optical switch
摘要 Electrical control of the emitter of a coupled quantum emitter-resonant cavity structure is provided. Electrodes are disposed near a semiconductor quantum dot coupled to a semiconductor optical cavity such that varying an applied bias at the electrodes alters an electric field at the quantum dot. Optical input and output ports are coupled to the cavity, and an optical response of the device relates light emitted from the output port to light provided to the input port. Altering the applied bias at the electrodes is capable of altering the optical response. Preferably, the closest electrode to the cavity is disposed between or away from angular lobes of the cavity mode, to reduce loss caused by the proximity of electrode to cavity. The present approach is applicable to both waveguide-coupled devices and non-waveguide devices.
申请公布号 US2010119193(A1) 申请公布日期 2010.05.13
申请号 US20090590729 申请日期 2009.11.12
申请人 ENGLUND DIRK;FARAON ANDREI;VUCKOVIC JELENA;FUSHMAN IIYA 发明人 ENGLUND DIRK;FARAON ANDREI;VUCKOVIC JELENA;FUSHMAN IIYA
分类号 G02B6/26;H01L29/66 主分类号 G02B6/26
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