| 发明名称 |
METHOD FOR PRODUCING TRENCH ISOLATION IN SILICON CARBIDE AND GALLIUM NITRIDE AND ARTICLES MADE THEREBY |
| 摘要 |
A method for fabricating a trench in a SiC or GaN semiconductor wafer is provided. The method may include filling the trench with a conformal layer of electrically and/or optically isolating material. A device is also provided.
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| 申请公布号 |
US2010117188(A1) |
申请公布日期 |
2010.05.13 |
| 申请号 |
US20070682067 |
申请日期 |
2007.03.05 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
WALDRAB PETER WILSON;KRETCHMER JAMES WILLIAM;GALEA JASON DAVID |
| 分类号 |
H01L29/06;H01L21/306;H01L21/762 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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