| 摘要 |
The invention relates to a method for fabricating a layer comprising nickel monosilicide NiSi on a substrate comprising silicon successively comprising the following steps: a) a step of incorporating, on a portion of the thickness of the said substrate comprising silicon, an element selected from W, Ti, Ta, Mo, Cr and mixtures thereof; b) a step of depositing, on the said substrate obtained in step a), a layer of nickel and a layer of an element selected from Pt, Pd, Rh and mixtures thereof or a layer comprising both nickel and an element selected from Pt, Pd, Rh and mixtures thereof; c) a step of heating to a temperature sufficient for obtaining the formation of a layer comprising nickel silicide optionally in the form of nickel monosilicide NiSi; d) a step of incorporating fluorine in the said layer obtained in c); and e) optionally, a step of heating to a sufficient temperature to convert the layer mentioned in d) to a layer comprising nickel silicide entirely in the form of nickel monosilicide NiSi. Application to silicon-based electronic devices.
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