| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to reduce the stripe of an oxide due to chemical by preventing a wet chemical from penetrating through a pin hole generated inside the oxide deposited at a low temperature. CONSTITUTION: A color filter layer is formed on a semiconductor substrate. A planarization layer(120) is formed on the color filter layer. An oxide layer(130) is formed on the planarization layer. The oxide layer is processed with plasma. A photoresist pattern is formed on the oxide layer processed with the plasma. A micro lens is formed by thermally processing the photoresist pattern.
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