| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent a crack from being applied to a micro lens by forming a phase change material inside a micro lens. CONSTITUTION: A photo diode is formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate. A color filter(130) is formed on the insulation layer. A planarization layer is formed on the color filter layer. A phase change material(170) is formed on the planarization layer. A micro lens(160) is formed on the planarization layer by corresponding to each photodiode. The phase change material is positioned inside the micro lens.
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