摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which corrects variations in the periods of time capable of holding information regardless of characteristics of transistors in a memory circuit. <P>SOLUTION: An additional current path is provided against the leakage current of the transistor. The amount of current flowing through the additional path is set so as to be larger than the amount of the leakage current of the transistor, so that variations in the periods during which information can be kept regardless of the characteristics of the transistors is redressed. As configuration, in order that the leakage current does not flow to the transistor, an element is added in parallel to the capacitor and the additional current path is provided. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |