| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a protective circuit which is provided with an appropriate constitution and in which occupied area is small, in order to make the most of the property of a display device that uses an oxide semiconductor which excels in operation properties and which can be manufactured at a low temperature. <P>SOLUTION: In the display device, a protective circuit is constituted, by using a non-linear element 170a having a gate insulating film 102 covering a gate electrode 111, a first oxide semiconductor layer 113 overlapping with the gate electrode 111 on a gate insulating layer 102; and a first wiring layer 117a and a second wiring layer 117b in which the gate electrodes are overlapped, with the end portions on the first oxide semiconductor layer 113 and the conductive layers and the second oxide semiconductor layers being laminated. By having the electrode of the non-linear element connected to a scanning line or a signal line, and the first wiring layer or the second wiring layer of the non-linear element for applying a potential to the gate electrode is directly connected to the electrode layer, stable operation by reduction in the connection resistance and reduction of occupied area of a connection portion are attained. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
