| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an integrated type semiconductor laser device having a blue semiconductor laser element and a green semiconductor laser element formed on surfaces of the same substrate, the semiconductor laser device allowing a decrease in the yield thereof to be suppressed. <P>SOLUTION: This semiconductor laser device 100 includes an n-type GaN substrate 1, a blue semiconductor laser element 10, formed on a surface of the n-type GaN substrate 1, including a first active layer 12 having a major surface of a (11-22) plane, and a green semiconductor laser element 20, formed on a surface of the n-type GaN substrate 1, including an active layer 22 made of InGaN having a major surface of a (11-22) plane. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
