| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To measure a resistance value relating to a resistance value in a destructed state of an anti-fuse element included in a semiconductor device. <P>SOLUTION: In the semiconductor device including an anti-fuse element which stores information depending on a destructed state or a non-destructed state, a measuring means is provided which measures a resistance value relating to a resistance value in a destructed state of the anti-fuse element. The measuring means includes a detected voltage generating means which generates, as a detected voltage, a voltage in accordance with a destructed or non-destructed state of the anti-fuse element; a means for generating a voltage for specification, which includes a plurality of resistive elements and selectively generates either one of voltages for measurement in multiple stages; and a comparison means for comparing the detected voltage and the voltage for specification. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
