发明名称 MANUFACTURING METHOD FOR FIELD EMISSION DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technique for forming a field emission device for a field emission display system that uses a low-cost, large-sized substrate by a process that enables improvement in the productivity. <P>SOLUTION: The field emission device includes a cathode electrode formed on an insulating surface of the substrate, and a convex electron emission section formed on the surface of the cathode electrode, and the cathode electrode and the electron emitting section are formed with identical crystal semiconductor film, and the electron emission section has a conical shape or a whisker shape. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010108942(A) 申请公布日期 2010.05.13
申请号 JP20090291532 申请日期 2009.12.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ONUMA HIDETO;SUZUKI YUKIE
分类号 H01J1/30;H01J9/02;H01J1/304;H01J29/04;H01J31/12 主分类号 H01J1/30
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