| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to promote the planarization of an interlayer insulation layer by repeating an etching process of an interlayer insulation layer and a removing process of a photoresist. CONSTITUTION: An interlayer insulation layer(130) is formed on a semiconductor substrate with a gate electrode. A CMP process for planarizing the interlayer insulation layer is performed. A photoresist(141) is coated on the interlayer insulation layer. A part of photoresist is removed until the part of the interlayer insulation layer is exposed. The exposed interlayer insulation layer is etched. The upper side of the photoresist is removed. A contact hole is formed inside the interlayer insulation layer and a metal wiring is formed inside the contact hole.
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