SEMICONDUCTOR DEVICE, ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To increase the electrostatic breakdown voltage of a semiconductor device while suppressing the chip size and manufacturing cost of an integrated circuit small and low. SOLUTION: The semiconductor device includes (i) a circuit (151) to be protected, (ii) a plurality of terminals (160), and (iii) an integrated circuit (150) including a plurality of electrostatic protecting circuits (155) provided corresponding to the plurality of terminals respectively and electrically connected between the terminals and the circuit to be protected, and connection wiring (190) for mutually and electrically connecting used terminals (160a) used to input or output signals to or from the circuit to be protected among the plurality of terminals and unused terminals (160b) not used to input and output of signals to and from the circuit to be protected among the plurality of terminals. COPYRIGHT: (C)2010,JPO&INPIT