发明名称 InGaN Columnar Nano-Heterostructures For Solar Cells
摘要 Methods, devices, and compositions of matter related to high efficiency InGaN-based photovoltaic devices. The disclosed synthesis of semiconductor heterostructures may be exploited to produce higher efficiency, longer lasting, photovoltaic cells.
申请公布号 US2010116333(A1) 申请公布日期 2010.05.13
申请号 US20090616634 申请日期 2009.11.11
申请人 ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY 发明人 PONCE FERNANDO A.;GARCIA RAFAEL;BARBOZA-FLORES MARCELINO
分类号 H01L31/0216;H01L21/02;H01L21/04 主分类号 H01L31/0216
代理机构 代理人
主权项
地址
您可能感兴趣的专利