发明名称 |
Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method |
摘要 |
A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions. |
申请公布号 |
US2010120214(A1) |
申请公布日期 |
2010.05.13 |
申请号 |
US20090590614 |
申请日期 |
2009.11.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK IMSOO;KIM YOUNG-HOO;HONG CHANGKI;LEE JAEDONG;EOM DAEHONG;KIM SUNG-JUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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