| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain a solid-state memory that has lower current values required for recording and deleting data, and can repeatedly rewrite data for a larger number of times. <P>SOLUTION: The solid memory has recording layers of which electric characteristics vary, according to phase transformation with Te and Al as principal components; the recording layers include at least two layers that include base phases in which phase transformation occurs between solid states; and at least the two layers constitute a superlattice structure. <P>COPYRIGHT: (C)2010,JPO&INPIT |
