| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for achieving the suppression of thermal resistance and the suppression of large size in the case of integrally bonding a structure including a semiconductor element to its support, and for suitably achieving the suppression of stress immanent in the structure and the support after the completion of junction. <P>SOLUTION: In such configurations that a reactive film 21 set to characteristics for securing a reaction temperature and a thermal conductivity with which melting brazing materials 20 is possible in an opposite relation between the reaction temperature and the thermal conductivity is interposed by the brazing materials 20, the brazing materials 20, the reaction film 21, the brazing materials 20 and the structure are sequentially laminated on a cooling unit 13. In this status, reaction conditions inducing the reaction are applied to the reactive film 21 to melt the brazing materials 20, and the structure including a semiconductor 10 is joined to the cooling unit 13. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
