发明名称 |
METHOD FOR FABRICATING PMOS TRANSISTOR AND METHOD FOR FORMING DUAL GATE USING THE SAME |
摘要 |
Provided are a method for fabricating a PMOS transistor and a method for forming a dual gate of a semiconductor device using the same. The method for fabricating a PMOS transistor includes forming a gate insulation layer over a semiconductor substrate; forming a polysilicon layer over the gate insulation layer; and doping the polysilicon layer using a boron (B) containing gas in one of an Atomic Layer Deposition (ALD) chamber and a Chemical Vapor Deposition (CVD) chamber.
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申请公布号 |
US2010120240(A1) |
申请公布日期 |
2010.05.13 |
申请号 |
US20080346492 |
申请日期 |
2008.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
ROUH KYOUNG BONG;KIM CHOON HWAN;RHO IL CHEOL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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