MATERIAL FORMING GATE INSULATING FILM LAYER, FIELD EFFECT TRANSISTOR AND PROCESS FOR FABRICATING FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a material forming a gate insulating film layer which can enhance the characteristic values of an FET, and to provide a field effect transistor and a process for fabricating a field effect transistor. SOLUTION: In the material forming the gate insulating film layer for a field effect transistor including a gate electrode, a source-drain electrode, a semiconductor layer constituting a channel layer, and a gate insulating film sandwiched by the gate electrode and the channel layer, the gate insulating film consists of epoxy resin, and a polycondensation aryloxysilane compound represented by formula (1) is used as a curing agent of the epoxy resin. In the formula (1), R1and R2are hydrocarbon groups, R3is a direct linkage group, a bivalent hydrocarbon group, O, S or SO2, Ar1and Ar2are arylene groups, m is an integer of 0 or greater, and n is an integer of 1 or greater. COPYRIGHT: (C)2010,JPO&INPIT