| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a high-frequency characteristic of a bipolar transistor. Ž<P>SOLUTION: This bipolar transistor includes: an n-type conductivity type first collector layer 14 formed on a p-type silicon substrate 10; an n-type conductivity type second collector layer 21 formed on the first collector layer 14, and small in width relative to the first collector layer 14; an insulation film layer 20 formed on the first collector layer 14 while contacting a side face of the second collector layer 21; a p-type conductivity type base layer 22 formed on the second collector layer 22; a p-type conductivity type base extraction layer 25 formed in contact with a side face of the base layer 22; and an n-type conductivity type emitter region 32 formed on the base layer 22. The insulation film layer 20 is formed between the first collector layer 14 and the base layer 22 or between the first collector layer 14 and the base extraction layer 25, whereby junction capacitance between the base and the collector is reduced. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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