| 摘要 |
PROBLEM TO BE SOLVED: To improve lifetime of a polishing wheel, and to accelerate processing speed. SOLUTION: Oxide film sections are rough-polished by a polishing wheel 5a having rough abrasive particles, as the oxide film section and a non-bonded section covering the outer peripheral surfaces 1c, 2c of a semiconductor wafer among the oxide films formed on the outer surface of the semiconductor wafer by a carrier gas at the heat treatment are polished in stages by successively using a plurality of polishing wheels 5a, 5b having different abrasive particle sizes. Then, the non-bonded section can be polished with the polishing wheel 5b having fine abrasive particles. Consequently, the loads applied to the polishing wheels 5 having different abrasive particle sizes are respectively lessened, and chipping hardly occurs around the outer periphery of the semiconductor wafer in the process of finish polishing of the polishing wheel 5b having fine abrasive particles. COPYRIGHT: (C)2010,JPO&INPIT
|
