| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high quality silicon wafer by providing a low temperature and a short period of time RTA (rapid thermal Annealing) heat treatment to the silicon wafer, preventing the occurrence of slippage of the silicon wafer, and forming pore spaces in the silicon wafer without the use of NH<SB>3</SB>. SOLUTION: The method of manufacturing the silicon wafer having a step of providing the RTA heat treatment to the silicon wafer in atmosphere gas with the use of nitrogen gas with water having a concentration of≥5 ppm and≤250 ppm mixed as the atmosphere gas. COPYRIGHT: (C)2010,JPO&INPIT
|
