| 摘要 |
To provide a semiconductor light-emitting device capable of sufficiently emitting lights of different colors. A semiconductor light-emitting device (1) includes a substrate (2) and a semiconductor layer (3) formed on the substrate (2). The semiconductor layer (3) has a buffer layer (11), an n-type semiconductor layer (12), a light-emitting layer (13), and a p-type semiconductor layer (14) stacked in this order from a substrate (2)-side. The light-emitting layer (13) has an MQW structure in which a plurality of well layers (21n) and a plurality of barrier layers (22m) are alternately stacked. A well layer (211) closest to the p-type semiconductor layer (14) emits a blue light having a wavelength of about 420 nm to about 470 nm. The well layer (211) is made of an undoped Inx1Ga1-x1N (0.05≦̸X1<0.2). A well layer (212) second closest to the p-type semiconductor layer (14) emits a green light having a wavelength of about 520 nm to about 650 nm. The well layer 212 is made of undoped Inx2Ga1-x2N (0.2≦̸X2≦̸0.3).
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