FORMING METHOD OF GALLIUM NITRIDE SYSTEM COMPOUND SEMICONDUCTOR LAYER, TRANSFER METHOD OF THE SAME, AND SUBSTRATE STRUCTURE WITH THE SAME BONDED THERETO

摘要

PURPOSE: A method for forming a gallium nitride based compound semiconductor layer, a transferring method thereof, and a substrate structure boned with the gallium nitride based compound semiconductor layer are provided to form an epitaxial layer of the gallium nitride based compound semiconductor on a first substrate using the traverse direction crystal growth of a first layer. CONSTITUTION: A first layer(13) containing the silicon oxide is formed on a sapphire substrate(10). The first layer is partly removed and an exposure unit is formed on a first substrate. An amorphous gallium nitride compound semiconductor is laminated on the first substrate with the exposure unit. A core of a semiconductor is formed on the exposure unit of the first substrate. An epitaxial layer(20) is formed on the first substrate. The epitaxial layer is removed. A separation groove(25) is formed on the first substrate.