| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a copolymer solution for semiconductor lithography, allowing a resist film to be used in semiconductor lithography, an antireflection film to be formed as an upper or lower layer of the resist film, a gap-fill film, a top coat film, etc., to have extremely-narrowed variance in thicknesses of these films and lithographic properties. <P>SOLUTION: The copolymer solution for semiconductor lithography contains a solvent for forming a coating film, and a copolymer containing at least one repeating unit selected from the group consisting of (A) the repeating unit having a hydroxy group, (B) the repeating unit having such a structure that a hydroxy group is protected by a group which suppresses dissolution of the hydroxy group in an alkaline developer and is dissociated by the action of an acid, (C) the repeating unit having a lactone structure, and (D) the repeating unit having a cyclic ether structure. The method for producing the copolymer solution for semiconductor lithography includes a step of controlling the copolymer concentration in a plurality of vessels packed with the same and one production lot to be within a predetermined range or production step. <P>COPYRIGHT: (C)2010,JPO&INPIT |
