| 摘要 |
The present invention provides a semiconductor device including thin film transistors that have different characteristics on the same substrate and that have high performance and high reliability and a production method thereof. The present invention is a semiconductor device including, on a main surface of a substrate, a structure in which a semiconductor layer, an insulating film, and a wiring are stacked in this order from a side of the substrate, wherein the semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer has a first channel region and a first source-drain region having a first contact part that is in contact with the wiring, the second semiconductor layer has a second channel region and a second source-drain region having a second contact part that is in contact with the wiring, the insulating film includes a first insulating film and a second insulating film, stacked in this order from the side of the substrate, the first insulating film is formed on the second channel region, except for on the first channel region and the first and second contact parts, and the second insulating film is formed on the first channel region, a part facing the second channel region of the first insulating film, the first source-drain region except for the first contact part, and the second source-drain region except for the second contact part.
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