| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin, compact and highly reliable semiconductor device having durability to external stress and electrostatic discharge, and to manufacture the semiconductor device with a satisfactory yield, preventing defects in a shape and a characteristic caused by the external stress or electrostatic discharge in a manufacturing process. <P>SOLUTION: By means of a conductive shield member disposed at the upper or the lower side of a semiconductor integrated circuit, an electrostatic damage (incorrect circuit operation and the damage of the semiconductor device) caused by the electrostatic discharge of the semiconductor integrated circuit is prevented, and sufficient communication capability is secured. Furthermore, by means of a pair of insulators for holding the semiconductor device in a sandwiched manner, it is possible to provide the thin, compact and highly reliable semiconductor device, having durability to the external stress and the electrostatic discharge. Also, it is possible to manufacture the semiconductor device with the satisfactory yield while preventing defects in the shape and the characteristic caused by the external stress or the electrostatic discharge in the manufacturing process. <P>COPYRIGHT: (C)2010,JPO&INPIT |
