发明名称 |
METHOD OF CLEANING IMMERSION LITHOGRAPHY APPARATUS, DUMMY WAFER, AND IMMERSION LITHOGRAPHY APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently adsorb and remove unwanted particles inside an immersion lithography apparatus. <P>SOLUTION: A method of cleaning an immersion lithography apparatus includes the steps of: placing a dummy wafer DW on a stage 611 of the immersion lithography apparatus; and moving the stage 611 while supplying an immersion liquid 605 between the dummy wafer DW and a projection lens 604. The dummy wafer DW includes a substrate 10 and an adsorption area 12 provided on the substrate 10 and having stronger power of adsorbing foreign substances (particles) suspended in the supplied immersion liquid 605 than that of the substrate 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010103363(A) |
申请公布日期 |
2010.05.06 |
申请号 |
JP20080274630 |
申请日期 |
2008.10.24 |
申请人 |
NEC ELECTRONICS CORP |
发明人 |
MATSUI YOSHINORI;ONODA ATARU |
分类号 |
H01L21/027;G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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