| 摘要 |
PROBLEM TO BE SOLVED: To suppress deterioration in characteristics of a magnetic layer and a nonmagnetic layer. SOLUTION: A magnetoresistive element includes: a stacked structure including a fixed layer 14 having a fixed direction of magnetization, a recording layer 12 having a variable direction of magnetization, and a nonmagnetic layer 13 sandwiched between the fixed layer 14 and the recording layer 12; a first protective film 16 covering a circumferential surface of the stacked structure and made of silicon nitride; and a second protective film 17 covering a circumferential surface of the first protective film 16 and made of silicon nitride. The first protective film 16 contains hydrogen at 4 at% or less, and the second protective film 17 contains hydrogen at 6 at% or above. COPYRIGHT: (C)2010,JPO&INPIT
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