发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing the cost of a semiconductor device and improving yield of the semiconductor device. <P>SOLUTION: Semiconductor chips 13 and 14 are bonded to an upper surface 25A of an insulating material 25. A first insulating layer 26 covering the semiconductor chips 13 and 14 is formed on the upper surface 25A of the insulating material 25. Openings 28, 29, 32, and 33 for exposing electrode pads 73, 74, 78, and 79 are formed in the first insulating layer 26. A first conductive film 91 contacting to the electrode pads 73, 74, 78, and 79 is formed in the openings 28, 29, 32, and 33. A terminal 93 of an inspection apparatus is made to contact to an upper surface 91A of the first conductive film 91, for performing electrical inspection with the semiconductor chips 13 and 14. Based on the result, it is determined whether the semiconductor chips 13 and 14 are normal or not. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010103290(A) 申请公布日期 2010.05.06
申请号 JP20080272973 申请日期 2008.10.23
申请人 SHINKO ELECTRIC IND CO LTD 发明人 KUBOTA KAZUYUKI
分类号 H01L23/12;G01R31/26;H01L23/52;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/12
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