| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device which can discharge residual electrons, in a short period of time and avoid wrong writing without fail. <P>SOLUTION: The n (n is an integer greater than or equal to 3) memory cells MC have respectively charge accumulation layers, control gates, and diffusion layers, and the diffusion layers are connected in series with one another. A first selection gate S1 is connected to a point between one end of each of the n memory cells and a source line SRC; while a second selection gate S2 is connected to a point between the other end of each of the n memory cells and a bit line BL. A control circuit 7 sets the control gates of the memory cell for writing and all other memory cells at a first voltage for conduction, immediately prior to executing a program operation for writing data to one of the n memory cells, and further, makes the voltage of the control gates of the memory cell and all other memory cells drop to a third voltage, after the first and second selection gates are set at a second voltage and made into a for conducting state. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
