| 摘要 |
<P>PROBLEM TO BE SOLVED: To assure extended condition where a protection capability of an insulated gate semiconductor device with built-in protection circuit works, improved heating shutoff, prevented malfunction, and improved usability. Ž<P>SOLUTION: The insulated gate semiconductor device includes a power insulated gate semiconductor element (M9), protection circuit MOSFETs (M1-M7) to control the power insulated gate semiconductor element, a constant voltage circuit utilizing forward voltages of constant voltage circuit diodes (D2a-D2f), and voltage-limiting diodes (D1 and D0a-D0d) to control an upper limit of the supply voltage for the constant voltage circuit, wherein the power to the voltage-limiting diodes is supplied from an external gate terminal on the power insulated gate semiconductor element. The present invention has an effect of assuring improved reliability and usability for the insulated gate semiconductor device with built-in protection circuit. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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