发明名称 |
IMAGE SENSOR WITH BACKSIDE PHOTODIODE IMPLANT |
摘要 |
An array of pixels is formed using a substrate. Each pixel can be formed on the substrate, which has a backside and a frontside that includes metalization layers. A photodiode is formed in the substrate and frontside P-wells are formed using frontside processing that are adjacent to the photosensitive region. A first N-type region is formed in the substrate below the photodiode. A second N-type region is formed in a region of the substrate below the first N-type region and is formed using backside processing.
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申请公布号 |
US2010109060(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20080266314 |
申请日期 |
2008.11.06 |
申请人 |
OMNIVISION TECHNOLOGIES INC. |
发明人 |
MAO DULI;VENEZIA VINCENT;TAI HSIN-CHIH;QIAN YIN;RHODES HOWARD E. |
分类号 |
H01L31/18;H01L27/146 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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