| 摘要 |
An image sensor according to embodiments may include a semiconductor substrate, photodiodes disposed over the semiconductor substrate, a dielectric layer formed over the photodiodes, a color filter layer formed over the dielectric layer, a planarization layer formed over the color filter layer, a phase change material formed over the planarization layer, and a plurality of microlenses formed over the planarization layer, wherein the phase change material is positioned in the microlens. Further, a method for manufacturing an image sensor according to embodiments may include forming a dielectric layer over a semiconductor substrate with a plurality of photodiodes, sequentially forming a color filter layer and a planarization layer over the dielectric layer, forming a phase change material over the planarization layer, forming a patterned phase change material by partially etching the phase change material, and forming microlenses over the planarization layer and the phase change material.
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