OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS
摘要
<p>A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.</p>
申请公布号
WO2010051537(A1)
申请公布日期
2010.05.06
申请号
WO2009US62982
申请日期
2009.11.02
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;CHUNG, ROY, B.;CHEN, ZHEN;SPECK, JAMES, S.;DENBAARS, STEVEN, P.;NAKAMURA, SHUJI
