发明名称 MANUFACTURING METHOD OF PIEZOELECTRIC SUBSTANCE FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a piezoelectric-substance film of a PZT system which is satisfactory in both the piezoelectric performance and durability. <P>SOLUTION: In this manufacturing method of the piezoelectric substance film constituted of a perovskite oxide represented by a formula (P), a process (A) for performing film formation under a condition of a/b&ge;1.07, and a process (B) for performing film formation under a condition of a/b<1.07 are executed, in this order, and a perovskite single-phase structure does not contain pyrochlore phase and satisfies the condition: a/b&le;1.06. The formula (P) is Pb<SB>a</SB>(Zr<SB>x</SB>, Ti<SB>y</SB>, M<SB>b-x-y</SB>)<SB>b</SB>O<SB>c</SB>, where M represents one kind or two, or more kinds of B site elements. Furthermore, although the formula satisfies 0<x<b, 0<y<b, 0&le;b-x-y, with a:b:c=1:1:3, where these mole ratios may shift from reference mole ratios, in a range allowing the perovskite structure. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010103546(A) 申请公布日期 2010.05.06
申请号 JP20090278383 申请日期 2009.12.08
申请人 FUJIFILM CORP 发明人 SHINKAWA TAKAMI;HISHINUMA KEIICHI
分类号 H01L21/8246;B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/16;C23C14/08;H01L27/105;H01L41/09;H01L41/18;H01L41/22;H01L41/316;H01L41/39;H03H3/02 主分类号 H01L21/8246
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