| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of side etching in dry etching. SOLUTION: A semiconductor substrate having a mask for forming grooves in a region for forming a semiconductor element on one side of a semiconductor film and an insulation film on the other side of the semiconductor film is placed on the lower electrode of the dry etching device so that a surface with the mask may be a processed surface; the outer periphery of the semiconductor substrate is pressed with a metallic clamp to be the potential substantially the same as that of the lower electrode; dry etching using the insulation film as an etching stopper layer is started; and the region and the clamp are brought into an electrically insulation state after at least the bottom surface of the grooves formed around the region reaches the insulation film. COPYRIGHT: (C)2010,JPO&INPIT |
