METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To obtain an SOI substrate with sufficient characteristics as one purpose or to reduce variations in characteristics of the SOI substrate due to irradiation conditions of laser light as one purpose in the case of irradiation with laser light. SOLUTION: A single crystal semiconductor substrate is irradiated with accelerated ions to form an embrittled region in the single crystal semiconductor substrate. The single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween. The single crystal semiconductor substrate is separated at the embrittled region and a semiconductor layer is formed over the base substrate. Heat treatment is performed to reduce defects in the semiconductor layer. The semiconductor layer is then irradiated with laser light. COPYRIGHT: (C)2010,JPO&INPIT