发明名称 |
THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR ARRAY, AND IMAGE DISPLAY |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which has an insulating layer with little failure formed without using a heat treatment process for solvent drying or heat curing, and to provide a method of manufacturing a thin-film transistor, a thin film transistor array and an image display. SOLUTION: The thin-film transistor includes: a bump 107; and an interlayer insulating layer 105 penetrated by the bump 107. The bump 107 contains a fluorine compound, and the interlayer insulating layer 105 is formed by thermocompression bonding of film-shaped hot melt adhesive. The bump includes the fluorine compound so that a fluorine content is not less than 0.01 wt.% and not more than 5 wt.%. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010103283(A) |
申请公布日期 |
2010.05.06 |
申请号 |
JP20080272835 |
申请日期 |
2008.10.23 |
申请人 |
TOPPAN PRINTING CO LTD |
发明人 |
OKUBO TORU;ISHIZAKI MAMORU |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/336;H01L21/768 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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