发明名称 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR ARRAY, AND IMAGE DISPLAY
摘要 PROBLEM TO BE SOLVED: To provide a thin-film transistor which has an insulating layer with little failure formed without using a heat treatment process for solvent drying or heat curing, and to provide a method of manufacturing a thin-film transistor, a thin film transistor array and an image display. SOLUTION: The thin-film transistor includes: a bump 107; and an interlayer insulating layer 105 penetrated by the bump 107. The bump 107 contains a fluorine compound, and the interlayer insulating layer 105 is formed by thermocompression bonding of film-shaped hot melt adhesive. The bump includes the fluorine compound so that a fluorine content is not less than 0.01 wt.% and not more than 5 wt.%. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010103283(A) 申请公布日期 2010.05.06
申请号 JP20080272835 申请日期 2008.10.23
申请人 TOPPAN PRINTING CO LTD 发明人 OKUBO TORU;ISHIZAKI MAMORU
分类号 H01L29/786;G02F1/1368;G09F9/30;H01L21/336;H01L21/768 主分类号 H01L29/786
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