发明名称 |
VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD |
摘要 |
Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.
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申请公布号 |
US2010110756(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20080261296 |
申请日期 |
2008.10.30 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
KHOURY MAROUN GEORGES;LIU HONGYUE;LEE BRIAN;CARTER ANDREW JOHN GJEVRE |
分类号 |
G11C11/00;G11C7/00;G11C11/14 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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