发明名称 |
NOVEL PROCESS FOR CONTROLLING SHALLOW TRENCH ISOLATION STEP HEIGHT |
摘要 |
A method for fabricating an integrated circuit with improved uniformity among the step heights of isolation regions is disclosed. The method comprises providing a substrate having one or more trenches; filling the one or more trenches; performing a chemical mechanical polishing on the one or more filled trenches, wherein each of the one or more filled trenches comprises a thickness; measuring the thickness of each of the one or more filled trenches; determining, based on the measured thickness of each of the one or more filled trenches, an amount of time to perform an etching process; and performing the etching process for the determined amount of time.
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申请公布号 |
US2010112732(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090478135 |
申请日期 |
2009.06.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LAI SU-CHEN;THEI KONG-BENG;CHUANG HARRY;SHEN GARY;LIAO SHUN-JANG |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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