发明名称 NOVEL PROCESS FOR CONTROLLING SHALLOW TRENCH ISOLATION STEP HEIGHT
摘要 A method for fabricating an integrated circuit with improved uniformity among the step heights of isolation regions is disclosed. The method comprises providing a substrate having one or more trenches; filling the one or more trenches; performing a chemical mechanical polishing on the one or more filled trenches, wherein each of the one or more filled trenches comprises a thickness; measuring the thickness of each of the one or more filled trenches; determining, based on the measured thickness of each of the one or more filled trenches, an amount of time to perform an etching process; and performing the etching process for the determined amount of time.
申请公布号 US2010112732(A1) 申请公布日期 2010.05.06
申请号 US20090478135 申请日期 2009.06.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LAI SU-CHEN;THEI KONG-BENG;CHUANG HARRY;SHEN GARY;LIAO SHUN-JANG
分类号 H01L21/66 主分类号 H01L21/66
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