发明名称 |
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THEREBY |
摘要 |
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an IlD disposed on a top surface of a metal gate disposed on the substrate. |
申请公布号 |
WO2010002718(A3) |
申请公布日期 |
2010.05.06 |
申请号 |
WO2009US48764 |
申请日期 |
2009.06.26 |
申请人 |
INTEL CORPORATION;SELL, BERNHARD;GOLONZKA, OLEG |
发明人 |
SELL, BERNHARD;GOLONZKA, OLEG |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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