发明名称 |
METHOD TO FABRICATE AND TREAT A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR TYPE, ENABLING DISPLACEMENT OF DISLOCATIONS, AND CORRESPONDING STRUCTURE |
摘要 |
<p>The present invention notably concerns a method to fabricate and treat a structure of semiconductor-on-insulator type, successively comprising a carrier substrate (1), an oxide layer (3) and a thin layer (2) of semiconducting material, according to which: 1) a mask is formed on said thin layer (2) so as to define exposed regions (20), on the surface of said layer, which are not covered by the mask; 2) heat treatment is applied so as to urge at least part of the oxygen of the oxide layer (3) to diffuse through the thin layer (2), leading to controlled removal of the oxide in the regions (30) of the oxide layer (3) corresponding to the desired pattern; characterized in that said carrier substrate (1) and thin layer (2) are arranged relative to each other so that their crystal lattices, in a plane parallel to their interface (I), together form an angle called a "twist angle" of no more than 1°, and in a plane perpendicular to their interface (I) an angle called a "tilt angle" of no more than 1°, and in that a thin layer (2) is used whose thickness is less than 1100 Å.</p> |
申请公布号 |
WO2010049250(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
WO2009EP63152 |
申请日期 |
2009.10.09 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;KONONCHUK, OLEG;GUIOT, ERIC;GRITTI, FABRICE;LANDRU, DIDIER;VEYTIZOU, CHRISTELLE |
发明人 |
KONONCHUK, OLEG;GUIOT, ERIC;GRITTI, FABRICE;LANDRU, DIDIER;VEYTIZOU, CHRISTELLE |
分类号 |
H01L21/762;H01L21/324 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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