Verfahren zur Herstellung einer Siliciumoxynitrid-ARC-Schicht über einer Halbleiterstruktur,申请号DE20001062660-传众专利搜索

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发明名称	Verfahren zur Herstellung einer Siliciumoxynitrid-ARC-Schicht über einer Halbleiterstruktur
摘要
申请公布号	DE10062660(B4)	申请公布日期	2010.05.06
申请号	DE20001062660	申请日期	2000.12.15
申请人	ADVANCED MICRO DEVICES INC.	发明人	RUELKE, HARTMUT;MAZUR, MARTIN
分类号	G03F7/09;G03F7/16;H01L21/31;H01L21/311;H01L21/314;H01L21/3213	主分类号	G03F7/09
代理机构		代理人
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