| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method providing a group-III nitride semiconductor layer having excellent crystallinity suitably used for forming a light-emitting device having excellent internal quantum efficiency and light extraction efficiency. <P>SOLUTION: The manufacturing method for forming a single-crystal group-III nitride semiconductor layer 103 on a substrate 101 includes: a substrate processing step of forming, on the substrate 101, an upper surface 10 comprising a plane 11 comprising a C-plane and a plurality of projecting portions 12; a pretreatment step of exposing the upper surface 10 of the substrate 101 to plasma of nitrogen gas; a buffer layer formation step of laminating a buffer layer formed of Al<SB>x</SB>Ga<SB>1-x</SB>N (0≤x≤1) on the upper surface by using the same device as that of the pretreatment step after the pretreatment step, and by a sputtering method using a mixture gas of nitrogen gas and argon gas; and an epitaxial step of epitaxially growing the group-III nitride semiconductor layer 103 on the upper surface 10 to embed the projecting portions 12 in the group-III nitride semiconductor layer 103. <P>COPYRIGHT: (C)2010,JPO&INPIT |
