发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To return to a normal operation regardless of existence of a malfunction detecting device when memory information of the nonvolatile memory is changed and the malfunction is effected due to a momentary break,α-rays, etc., in a configuration of nonvolatile memory and volatile memory. <P>SOLUTION: Reset signals to be input to the nonvolatile memory are sent by gathering them for each one bit, each one word and each number of optionally predetermined bits, and periodically sent them as one unit, and even though the storage information of the nonvolatile memory is changed due to the momentary break,αrays, etc., the normal operation is recovered without input signals from the outside. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010102779(A) 申请公布日期 2010.05.06
申请号 JP20080273726 申请日期 2008.10.24
申请人 HITACHI LTD 发明人 MIYAJIMA KENTARO;YAMASHITA TAKEO;MURATA TOMOO
分类号 G11C16/04;G11C11/41;G11C16/06;G11C17/14 主分类号 G11C16/04
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