SEMICONDUCTOR MEMORY DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To reduce a parasitic resistance of a memory cell while reducing the area thereof. Ž<P>SOLUTION: A semiconductor memory device includes: bit lines BL and /BL provided in a layer of the same level above a semiconductor substrate 30; a first variable-resistance element 10 and a first MOSFET 20 which are provided below the bit line BL and are connected in series; and a second variable-resistance element 10 and a second MOSFET 20 which are provided below the bit line /BL and are connected in series. The semiconductor memory device also includes a first interconnection layer 35 for electrically connecting one end of the first variable-resistance element 10 and one end of the second MOSFET 20 to the bit line BL and a second interconnection layer 35 for electrically connecting one end of the second variable-resistance element 10 and one end of the first MOSFET 20 to the bit line /BL. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž