| 摘要 |
A semiconductor device of the present invention includes a semiconductor layer, a low withstand voltage transistor, and a high withstand voltage transistor. In the low withstand voltage transistor, a first high concentration collector region and a first base region contact with a first low concentration collector region provided in the semiconductor layer. In the high withstand voltage transistor, a second high concentration collector region and a second base region contact a second low concentration collector region provided in the semiconductor layer. Further, the second high concentration collector region and the second base region are configured such that the distance between the second high concentration collector region and the second base region in a parallel direction to a main surface of the semiconductor layer is longer than the distance between the first high concentration collector region and the first base region.
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