发明名称 |
Method for manufacturing group III nitride single crystals |
摘要 |
An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.
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申请公布号 |
US2010107969(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20100655826 |
申请日期 |
2010.01.08 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
KURAOKA YOSHITAKA;SUMIYA SHIGEAKI;MIYOSHI MAKOTO;IMAEDA MINORU |
分类号 |
C30B7/00 |
主分类号 |
C30B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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